Bangalore/Noida | 8+ Years
1.Architect and design complex memory circuits—bitcells, sense amps, decoders, write drivers, control logic, compiler tiling—and optimize for PPA, timing, yield, and power.
2.Drive full transistor-level design: perform PVT corner analysis, Monte Carlo variability, leakage control, and robustness margining.
3.Work cross-functionally with memory compiler teams: define tiling strategy, netlist generation, and flow architecture.
4.Partner with layout and extraction teams to identify layout-induced parasitics, IR/EM risk, and propose circuit modifications for robustness.
5.Lead silicon bring-up and characterization: correlate sim-to-silicon, debug issues, and drive flow improvements.
6.Develop and enhance design/validation automation flows using Python, Tcl, Perl, or Shell.
7.Mentor junior engineers, conduct design reviews, influence methodology, and shape memory design strategy.
1.Bachelor’s, Master’s, or PhD in Electrical, Electronics, Microelectronics, or VLSI Engineering.
2.8+ years of memory circuit design experience at advanced nodes (≥16 nm, FinFET).
3.Demonstrated expertise in SRAM/NVM / register-file design at transistor level.
4.Proficient in EDA tools: HSPICE/Spectre/Custom Designer, plus extraction and reliability tools (Star-RC, QFS).
5.Strong knowledge of process variability, IR/EM trade-offs, layout effects, and power-robustness design.
6.Familiarity with memory compilers, tiling scripts, and netlist/code generation.
7.Hands-on scripting skills in Python, Tcl, Perl, or shell for automation.
8.Excellent communication, cross-functional collaboration, and technical leadership abilities.
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